Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field
Author:
Affiliation:
1. Department of Electronics and Communication EngineeringNational Institute of Science and TechnologyPalur HillsBerhampur761008OdishaIndia
2. Department of Electronic ScienceBerhampur UniversityBerhampur760007OdishaIndia
Funder
Science and Engineering Research Board
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800337
Reference44 articles.
1. Quantum Wells, Wires and Dots
2. Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
3. Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells
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2. Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped AlxGa1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields;Philosophical Magazine;2023-02-10
3. Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field;Physica Scripta;2021-10-28
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