Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field
Author:
Funder
Govt. of India
Science and Engineering Research Board
DST
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
https://iopscience.iop.org/article/10.1088/1402-4896/ac3046/pdf
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4. Quantum engineering of nanoelectronic devices: the role of quantum confinement on mobility degradation;Fairus;Microelectron. J.,2001
5. Efficiency droop alleviation in blue light-emitting diodes using the InGaN/GaN triangular-shaped quantum well;Zhao;Chin. Phys. B,2012
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