Background impurities and a delta-doped QW. Part I: Center doping
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab4c7a/pdf
Reference72 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
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3. Binding energies of hydrogenic impurities in finite-quantum-well structures with effective-mass mismatch: Simple and accurate variational treatments
4. Binding energies of acceptors in GaAs-AlxGa1−xAsquantum wells
5. Effect of nonparabolicity on the energy levels of hydrogenic donors inGaAs−Ga1−xAlxAsquantum-well structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of impurity position and doping concentration on the binding energies and total optical absorption coefficients in a $${\delta }$$-doped quantum well;The European Physical Journal Plus;2021-04
2. Background impurities in a delta-doped QW. Part II: Edge doping;Semiconductor Science and Technology;2021-03-04
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