A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy

Published:1981-08 Issue:3 Volume:39 Page:193-194
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsang W. T.,Ditzenberger J. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.92699

Reference18 articles.

1. Red‐light‐emitting laser diodes operating cw at room temperature

2. New heteroisolation stripe-geometry visible-light-emitting lasers

3. Transverse-mode stabilized Ga_1−xAlxAs visible diode lasers

4. Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy

5. cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy

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1. Quantum-Well Semiconductor Lasers;Semiconductor Lasers;1993

2. Advances in MOVPE, MBE, and CBE;Journal of Crystal Growth;1992-05

3. Basic Physics of Semiconductor Lasers;Optoelectronic Technology and Lightwave Communications Systems;1989

4. Chapter 3: Deep Levels in 111-V Compound Semiconductors Grown by Molecular Beam Epitaxy;Semiconductors and Semimetals;1988

5. Epitaxial Growth for Sub Micron Structures;The Physics of Submicron Semiconductor Devices;1988

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