Red‐light‐emitting laser diodes operating cw at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88578
Reference10 articles.
1. IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE‐CONFINEMENT STRUCTURE
2. Low-threshold al<inf>x</inf>Ga<inf>1-x</inf>As visible and IR-light-emitting diode lasers
3. FABRY‐PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2
4. SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATURE
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1. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
2. Molecular beam epitaxy of AlAs/GaAs heterostructures and superlattices;Thin Solid Films;1988-09
3. Visible Ga1−xAlxAs semiconductor lasers with large optical cavity;Conference on Lasers and Electro-Optics;1986
4. cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW;Applied Physics Letters;1983-06
5. 680 nm CW operation at room temperature by AlGaAs double heterojunction lasers;IEEE Journal of Quantum Electronics;1983-06
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