Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2929386
Reference14 articles.
1. Polar-on-nonpolar epitaxy
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