Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures-Reference-Cited by-同舟云学术

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Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Published:2018-08-14 Issue:6 Volume:124 Page:065704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Khiangte Krista R.¹^ORCID,Rathore Jaswant S.¹,Das Sudipta²,Pokharia Ravindra S.²,Schmidt Jan³,Osten H. J.³,Laha Apurba²,Mahapatra Suddhasatta¹

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Mumbai, India

2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India

3. Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hanover, Germany

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5020026

Reference43 articles.

1. 105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers

2. GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

3. High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

4. Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

5. MOSFETs and high-speed photodetectors on ge-on-insulator substrates fabricated using rapid melt growth

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1. Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2O3/Si(111) Substrate using Radio Frequency Sputtering for Silicon on Insulator Application;Thin Solid Films;2024-09

2. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19

3. Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2o3/Si(111) Substrate Using Rf Sputtering for Soi Application;2024

4. Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy;Journal of Crystal Growth;2023-09

5. Insights into the growth of hexagonal Si crystals using Al-based nano absorber;Semiconductor Science and Technology;2022-03-08

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