Point defect creation by proton and carbon irradiation of α-Ga<sub>2</sub>O<sub>3</sub>-Reference-Cited by-同舟云学术

Point defect creation by proton and carbon irradiation of α-Ga₂O₃

Published:2022-07-21 Issue:3 Volume:132 Page:035701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov Alexander Y.¹,Nikolaev Vladimir I.²³,Meshkov Igor N.⁴,Siemek Krzysztof⁴^ORCID,Lagov Petr B.¹⁵,Yakimov Eugene B.¹⁶^ORCID,Pechnikov Alexei I.²³^ORCID,Orlov Oleg S.⁴,Sidorin Alexey A.⁴,Stepanov Sergey I.²³,Shchemerov Ivan V.¹,Vasilev Anton A.¹^ORCID,Chernykh Alexey V.¹^ORCID,Losev Anton A.⁷,Miliachenko Alexandr D.⁷,Khrisanov Igor A.⁷,Pavlov Yu.S.⁵^ORCID,Kobets U. A.⁸,Pearton Stephen J.⁹^ORCID

Affiliation:

1. National University of Science and Technology MISiS, Moscow, Leninsky pr. 4, Moscow 119049, Russia

2. Ioffe Institute, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia

3. Perfect Crystals LLC, 28 Politekhnicheskaya str., 194064 St. Petersburg, Russia

4. Joint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow Region 141980, Russian Federation

5. Laboratory of Radiation Technologies, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences (IPCE RAS), Moscow 119071, Russia

6. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia

7. Institute for Theoretical and Experimental Physics NRC “Kurchatov Institute,” B. Cheremushkinskaya 25, Moscow 117218, Russian Federation

8. Institute for Physics and Power Engineering, Bondarenko sq. 1, Obninsk 249033, Russian Federation

9. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Abstract

Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 × 1015 cm−2 and with 7 MeV C4+ ions with a fluence of 1.3 × 1013 cm−2 and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at Ec-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium–oxygen divacancies VGa–VO, and oxygen vacancies VO. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of VGa and VGa–VO.

Funder

Ministry of Science and Higher Education of the Russian Federation

Defense Threat Reduction Agency

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0100359

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1. A review of Ga2O3materials, processing, and devices