Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations-Reference-Cited by-同舟云学术

Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations

Published:2018-10-22 Issue:17 Volume:113 Page:173501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tai Mao-Chou¹,Chang Ting-Chang²³^ORCID,Chen Ming-Chen³,Chiang Hsiao-Cheng⁴,Tsao Yu-Ching³,Chien Yu-Chieh⁴,Wang Yu-Xuan¹,Tsai Yu-Lin³,Chen Jian-Jie³,Zhang Shengdong⁵⁶,Chang Hsi-Ming⁷⁸

Affiliation:

1. Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 804, Taiwan

2. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701, Taiwan

3. Department of Physics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 804, Taiwan

4. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 804, Taiwan

5. School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China

6. Institute of Microelectronics, Peking University, Beijing 100871, China

7. ChungHwa Picture Tube, Strategical Product Division, Taoyuan 334444, Taiwan

8. ChungHwa Picture Tube, Advanced Technology Center, Taoyuan 33444, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5042617

Reference22 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

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4. Material characteristics and applications of transparent amorphous oxide semiconductors

5. Enhanced Current Drive of Double-Gate $\alpha$-IGZO Thin-Film Transistors

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