Improving Reliability of High-Performance Ultraviolet Sensor in a-InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Improving Reliability of High-Performance Ultraviolet Sensor in a-InGaZnO Thin-Film Transistors

Published:2019-09 Issue:9 Volume:40 Page:1455-1458
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tsai Yu-Lin,Chien Yu-Chieh^ORCID,Chang Ting-Chang^ORCID,Tsao Yu-Ching,Tai Mao-Chou,Tu Hong-Yi,Chen Jian-Jie,Wang Yu-Xuan,Zhou Kuan-Ju,Shih Yu-Shan,Lu I-Nien,Huang Hui-Chun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8811651/08765779.pdf?arnumber=8765779

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects;ACS Applied Electronic Materials;2023-04-07

2. High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display;Micromachines;2022-10-09

3. Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer;IEEE Electron Device Letters;2022-08

4. Resistive Switching in Sputtered ZnO/IGZO Heterostructure Memristor;2022 IEEE 5th International Conference on Electronics Technology (ICET);2022-05-13

5. Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions;Journal of Materials Chemistry C;2022

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