Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions-Reference-Cited by-同舟云学术

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Published:2022 Issue:24 Volume:10 Page:9192-9197
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhou Kuan-Ju¹,Chen Po-Hsun²,Zheng Yu-Zhe³,Tai Mao-Chou⁴,Wang Yu-Xuan⁵,Chien Ya-Ting³,Sun Pei-Jun³,Huang Hui-Chun³,Chang Ting-Chang¹^ORCID,Sze Simon M.⁵

Affiliation:

1. Department of Physics, National Sun Yay-Sen University, Kaohsiung 804, Taiwan

2. Department of Physics, Military Academy, Kaohsiung 83059, Taiwan

3. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

5. Department of Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan

Abstract

In this study, a thin-film transistor with a heterogeneous channel structure was introduced into oxide semiconductors to improve their electrical properties, which resulted in high mobility and lower subthreshold swing (S.S.).

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01460B

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1. Materials and Designs for Wearable Photodetectors

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