Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer-Reference-Cited by-同舟云学术

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Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer

Published:2022-08 Issue:8 Volume:43 Page:1299-1302
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Chao-Yen¹,Ko Rong-Ming²^ORCID,Huang Sin-Jhih¹,Su Meng-Yung¹,Wu Chien-Hung³^ORCID,Wang Shui-Jinn¹

Affiliation:

1. Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, Taiwan

3. Department of Optoelectronics and Materials Engineering, Chung Hua University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9841091/09796527.pdf?arnumber=9796527

Reference28 articles.

1. Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor

2. Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

3. UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

4. Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process

5. Realization of a Self-Powered InGaZnO MSM UV Photodetector Using Localized Surface Fluorine Plasma Treatment

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1. Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio;Materials Today Chemistry;2024-06

2. Low-Voltage IGZO Field-Effect Ultraviolet Photodiode;Chinese Physics Letters;2024-06-01

3. Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance;Japanese Journal of Applied Physics;2024-01-04

4. Synthesis of InAl-alloyed Ga₂O₃ nanowires for self-powered ultraviolet detectors by a CVD method;RSC Advances;2024

5. Superior Performance of ZnGaO Solar-Blind Photodetectors by Implementing TFT Structure and Tunable ZNO Cycle Ratio;2024

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