Synthesis of InAl-alloyed Ga<sub>2</sub>O<sub>3</sub> nanowires for self-powered ultraviolet detectors by a CVD method-Reference-Cited by-同舟云学术

Synthesis of InAl-alloyed Ga₂O₃ nanowires for self-powered ultraviolet detectors by a CVD method

Published:2024 Issue:32 Volume:14 Page:22847-22857
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Li Bei¹²,Dong Zhiyu¹²,Xu Wei²,Li Guowei²,Yang Xiaozhan¹^ORCID,Feng Shuanglong¹^ORCID,Feng Wenlin¹,Lu Wenqiang²^ORCID

Affiliation:

1. School of Science, Chongqing University of Technology, Chongqing Key Laboratory of New Energy Storage Materials and Devices, Chongqing 400054, P. R. China

2. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Multiscale Manufacturing Technology Lab, Chongqing School, University of Chinese Academy of Sciences, Chongqing, 400714, China

Abstract

Ga2O3 is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing Municipality

Chongqing Municipal Youth Science and Technology Talent Training Project

Chongqing Municipal Education Commission

Chongqing Municipal Science and Technology Bureau

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA04176C

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