Enhanced Current Drive of Double-Gate $\alpha$-IGZO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Enhanced Current Drive of Double-Gate $\alpha$-IGZO Thin-Film Transistors

Published:2013-03 Issue:3 Volume:34 Page:417-419
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Tsang-Long,Huang Kuan-Chang,Lin Hsuan-Yi,Chou C. H.,Lin H. H.,Liu C. W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6468094/06423205.pdf?arnumber=6423205

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2. Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer;Scientific Reports;2024-04-01

4. Improving the electrical stability of a‐IGZO TFT through gate surround structures;Electronics Letters;2023-10

5. Design and Performance Investigation of Dual-Gate ZnO Nanostructured Thin-Film Transistor;Lecture Notes in Electrical Engineering;2023-09-03

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