Kinetics of processes in the Ti–Si1−xGex systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117116
Reference20 articles.
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lattice stability and point defect energetics of TiSi2 and TiGe2 allotropes from first-principles calculations;Journal of Applied Physics;2021-02-28
2. Stability and composition of Ni–germanosilicided Si[sub 1−x]Ge[sub x] films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
4. Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15;Journal of Electronic Materials;2002-05
5. Thermal reaction of nickel and Si[sub 0.75]Ge[sub 0.25] alloy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002
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