Lattice stability and point defect energetics of TiSi2 and TiGe2 allotropes from first-principles calculations
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
Funder
Florida Education Fund
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0029990
Reference80 articles.
1. Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects
2. Silicide formation
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4. Metastable phase formation in titanium‐silicon thin films
5. Film thickness effects in the Ti–Si1−xGexsolid phase reaction
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