Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15-Reference-Cited by-同舟云学术

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Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15

Published:2002-05 Issue:5 Volume:31 Page:500-505
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Chung Ming-Shaw,Wang Ming-Jun,Lin Wen-Tai,Chang T. C.,Fang Y. K.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-002-0106-7.pdf

Reference43 articles.

1. F.Y. Huang, X. Zhu, M.O. Tanner, and K.L. Wang, Appl. Phys. Lett. 67, 566 (1995).

2. H. Presting, H. Kibbel, M. Jaros, R.M. Turton, U. Menczigar, G. Abstreiter, and H.G. Grimmeiss, Semicond. Sci. Technol. 1, 1127 (1992).

3. R.D. Thompson, K.N. Tu, J. Angillelo, S. Delage, and S.S. Iyer, J. Electrochem. Soc. 35, 3161 (1988).

4. J.S. Luo, W.T. Lin, C.Y. Chang, and W.C. Tsai, J. Appl. Phys. 82, 3621 (1997).

5. Q.Z. Hong and J.W. Mayer, J. Appl. Phys. 66, 611 (1989).

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