Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1455698
Reference16 articles.
1. Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
2. Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
3. Influence of growth rate on the structure of thick GaN layers grown by HVPE
4. Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy
5. Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces
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2. Three Solid Modifications of Ba[Ga(NH 2 ) 4 ] 2 : A Soluble Intermediate in Ammonothermal GaN Crystal Growth;European Journal of Inorganic Chemistry;2017-02-03
3. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate;ACS Applied Materials & Interfaces;2016-12-08
4. Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growth;Journal of Crystal Growth;2014-10
5. Growth of nonpolar m-plane GaN (10−10) single crystal on (100) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy;Journal of Crystal Growth;2011-02
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