Three Solid Modifications of Ba[Ga(NH 2 ) 4 ] 2 : A Soluble Intermediate in Ammonothermal GaN Crystal Growth
Author:
Affiliation:
1. Institut für Anorganische Chemie Universität Stuttgart Pfaffenwaldring 55 70569 Stuttgart Germany
2. Lehrstuhl für Prozessmaschinen und Anlagentechnik Friedrich‐Alexander‐Universität Erlangen‐Nürnberg Cauerstraße 4 91058 Erlangen Germany
Funder
DFG
Publisher
Wiley
Subject
Inorganic Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/ejic.201601342
Reference48 articles.
1. Growth and applications of Group III-nitrides
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3. Technology of Gallium Nitride Crystal Growth
4. Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
5. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
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