Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting-Reference-Cited by-同舟云学术

Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

Published:2019-02 Issue:2 Volume:7 Page:022515
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Schewski R.¹^ORCID,Lion K.²^ORCID,Fiedler A.¹,Wouters C.¹^ORCID,Popp A.¹,Levchenko S. V.³⁴,Schulz T.¹^ORCID,Schmidbauer M.¹,Bin Anooz S.¹,Grüneberg R.¹,Galazka Z.¹^ORCID,Wagner G.¹,Irmscher K.¹^ORCID,Scheffler M.³,Draxl C.²,Albrecht M.¹^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

2. Humboldt-Universität zu Berlin, Institut für Physik und IRIS, Zum Großen Windkanal 6, D-12489 Berlin, Germany

3. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Theory Department, Faradayweg 4-6, 14195 Berlin, Germany

4. Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel Street, 143026 Moscow, Russia

Funder

Deutsche Forschungsgemeinschaft

Leibniz-Gemeinschaft

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5054943

Reference36 articles.

1. Experimental electronic structure of In2O3and Ga2O3

2. High-performance single crystalline UV photodetectors of β-Ga2O3

3. Recent progress in Ga2O3power devices

4. Recent progress in the growth of β-Ga2O3 for power electronics applications

5. $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

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