Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1767979
Reference28 articles.
1. The effect of fluorine in silicon dioxide gate dielectrics
2. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
3. Room Temperature Deposition of Silicon Dioxide Films by Ion‐Assisted Plasma Enhanced Chemical Vapor Deposition
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