Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties-Reference-Cited by-同舟云学术

Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties

Published:2019-02 Issue:2 Volume:9 Page:025204
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jang Seong Cheol¹,Park Jozeph²,Kim Hyoung-Do¹,Hong Hyunmin³,Chung Kwun-Bum³,Kim Yong Joo⁴,Kim Hyun-Suk¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

3. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea

4. Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5082862

Reference20 articles.

1. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Amorphous Oxide Semiconductor TFTs for Displays and Imaging

4. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

5. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

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