Improved Performance and Operational Stability of Solution-Processed InGaSnO (IGTO) Thin Film Transistors by the Formation of Sn–O Complexes
Author:
Affiliation:
1. Department of Photonics and Nanoelectronics, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Republic of Korea
Funder
Hanyang University
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01048
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