One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices
Author:
Affiliation:
1. School of Electrical Engineering, Kookmin University, Seoul 02707, South Korea
2. School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, South Korea
Funder
National Research Foundation of Korea
Electronics and Telecommunications Research Institute
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00499
Reference62 articles.
1. Memristors for Energy-Efficient New Computing Paradigms
2. Nanoscale Memristor Device as Synapse in Neuromorphic Systems
3. Emerging Memory Devices for Neuromorphic Computing
4. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
5. Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
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