Identifying a suitable passivation route for Ge interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4742166
Reference38 articles.
1. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
2. 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation
3. Interface-Engineered High-Mobility High-$k$/Ge pMOSFETs With 1-nm Equivalent Oxide Thickness
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