Optical and electrical characterization of high‐resistivity liquid‐phase‐epitaxial In0.53Ga0.47As: Fe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341260
Reference25 articles.
1. LPE growth of high purity InP and In1−xGaxP1−yAsy
2. High purity LPE growth of InGaAs by adding Al to melt
3. Semi-insulating In0.53Ga0.47As by Fe doping
4. Bound‐exciton‐related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy
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1. Are Extended Defects a Show Stopper for Future III-V CMOS Technologies;Journal of Physics: Conference Series;2019-05-01
2. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra;Applied Physics Letters;2018-12-03
3. Bandlike and localized states of extended defects in n-type In0.53Ga0.47As;Journal of Applied Physics;2018-10-28
4. Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors;Journal of Crystal Growth;2017-11
5. Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor;Journal of Applied Physics;2017-02-07
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