Hillock formation on copper at room temperature by cleaning in ammonia vapor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412432
Reference12 articles.
1. Encapsulated copper interconnection devices using sidewall barriers
2. Hillock formation during electromigration in Cu and Al thin films: Three‐dimensional grain growth
3. Selective CVD-W for capping damascene Cu lines
4. Stress development and relaxation in copper films during thermal cycling
5. Interfacial sliding in Cu/Ta/polyimide high density interconnects as a result of thermal cycling
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Multilevel Zero-Inflated Model for the Study of Copper Hillocks Growth in Integrated Circuits Manufacturing;IEEE Transactions on Semiconductor Manufacturing;2018-08
2. Disorder trapping during the solidification of βNi3Ge from its deeply undercooled melt;Journal of Materials Science;2011-11-02
3. Compatibilities of dielectric films;Interlayer Dielectrics for Semiconductor Technologies;2003
4. Texture and hillocking in sputter-deposited copper thin films;Journal of Materials Science: Materials in Electronics;2002
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