Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices-Reference-Cited by-同舟云学术

Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices

Published:2019-02-04 Issue:5 Volume:114 Page:053506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ding Ping¹²³,Yang Youbin¹²³,Wang Yiru¹²³,Liu Chang¹²³,Yin Jiang¹²³,Xia Yidong¹²³,Li Aidong¹²³,Liu Zhiguo¹²³

Affiliation:

1. Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China

2. National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

3. Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5063625

Reference19 articles.

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2. Two-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory

3. Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers

4. Effects of Oxynitride Buffer Layer on the Electrical Characteristics of Poly-Silicon TFTs Using $\hbox{Pr}_{2}\hbox{O}_{3}$ Gate Dielectric

5. SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

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