Effects of Oxynitride Buffer Layer on the Electrical Characteristics of Poly-Silicon TFTs Using $\hbox{Pr}_{2}\hbox{O}_{3}$ Gate Dielectric-Reference-Cited by-同舟云学术

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Effects of Oxynitride Buffer Layer on the Electrical Characteristics of Poly-Silicon TFTs Using $\hbox{Pr}_{2}\hbox{O}_{3}$ Gate Dielectric

Published:2008-06 Issue:6 Volume:55 Page:1379-1385
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pan Tung-Ming,Wu Tin-Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4527049/04527069.pdf?arnumber=4527069

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