Two-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory-Reference-Cited by-同舟云学术

Two-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory

Published:2007 Issue:7 Volume:154 Page:H619
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lin Yu-Hsien,Chien Chao-Hsin,Yang Tsung-Yuan,Lei Tan-Fu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer

2. T. Sugizaki, M. Kobayashi, H. Minakata, M. Yamaguchi, Y. Tamura, Y. Sugiyama, H. Tanaka, T. Nakanishi, and Y. Nara , inProceedings of the IEEE Non-Volatile Semiconductor Memory Workshop, IEEE, p. 60 (2003).

3. Chemical vapor deposition of Ge nanocrystals on SiO2

4. The International Technology Roadmap for Semiconductors (ITRS) , p. 27 (2001).

5. T. Sugizaki, M. Kobayashi, M. Ishidao, H. Minakata, M. Yamaguchi, Y. Tamura, Y. Sugiyama, T. Nakanishi, and H. Tanaka , inProceedings of the VLSI Symposium Technical Digest, p. 27 (2001).

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