Diffusion and impurity segregation in hydrogen-implanted silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4882996
Reference30 articles.
1. Power semiconductor device figure of merit for high-frequency applications
2. Modified Deal Grove model for the thermal oxidation of silicon carbide
3. Boron and aluminum diffusion into 4H–SiC substrates
4. Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon
5. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
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