Diffusion and impurity segregation in hydrogen-implanted silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4882996
Reference30 articles.
1. Power semiconductor device figure of merit for high-frequency applications
2. Modified Deal Grove model for the thermal oxidation of silicon carbide
3. Boron and aluminum diffusion into 4H–SiC substrates
4. Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon
5. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature;Frontiers in Materials;2023-11-10
2. Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC;Journal of Vacuum Science & Technology A;2023-09-12
3. Interaction of Stacking Faults with point/extended defects in Fe-He irradiated 6H-SiC;Acta Materialia;2023-09
4. Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature;Journal of Semiconductors;2023-05-01
5. Helium and strontium co-implantation into SiC at room temperature and isochronal annealing: Structural evolution of SiC and migration behaviour of strontium;Materials Chemistry and Physics;2023-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3