Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy-Reference-Cited by-同舟云学术

Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy

Published:1995-04 Issue:4 Volume:24 Page:289-294
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Larkin D. J.,Sridhara S. G.,Devaty R. P.,Choyke W. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02659689.pdf

Reference29 articles.

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4. J.M. McGarrity, F.B. McLean, W.M. DeLancey, J. Palmour, C. Carter, J. Edmond and R.E. Oakley,IEEE Trans. Nucl. Sci. 39, 1974 (1992).

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