Author:
Gupta Gaurav,Jozwik Przemyslaw,Ojha Sunil,Umapati G.,Pandey Akhilesh,Rath Shyama
Reference40 articles.
1. Review of SiC Crystal Growth Technology;P J Wellmann;Semicond. Sci. Technol,2018
2. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices;H Matsunami;Jpn. J. Appl. Phys., Part,2004
3. Polytypism and Properties of Silicon Carbide;F Bechstedt;Phys. Stat. Sol. (b),1997
4. Heavy-Ion Induced Single Event Effects and Latent Damages in SiC Power MOSFETs;C Martinella;Microelectronics Reliability,2022
5. Characterization and Modelling of the Ion-Irradiation Induced Disorder in 6H-SiC and 3C-SiC Single Crystals;A Debelle;J. Phys. D: Appl. Phys,2010