Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy-Reference-Cited by-同舟云学术

Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Published:2016-07-11 Issue:2 Volume:109 Page:023509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Zhiheng¹²,Xu Guangwei¹²,Wang Wei¹²,Lu Congyan¹²^ORCID,Lu Nianduan¹²^ORCID,Ji Zhuoyu¹²,Li Ling¹²,Liu Ming¹²

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4958332

Reference25 articles.

1. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

2. 11.2: A 2.4-in. AMOLED with IGZO TFTs and Inverted OLED Devices

3. 8.3:Invited Paper: Advantages of IGZO Oxide Semiconductor

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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