Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Author:

Wang Rui1,Shao Wen-Zhu1ORCID,Liu Yue1,Xu Bo1,Sun Zhao-Yuan1,Li Hui2,Zhang Chang-Jin3ORCID,Xu Cheng-Yan45ORCID,Li Yang15ORCID,Zhen Liang1ORCID

Affiliation:

1. School of Materials Science and Engineering, Harbin Institute of Technology 1 , Harbin 150001, China

2. Institutes of Physical Science and Information Technology, Anhui University 2 , Hefei 230601, China

3. Chinese Academy of Sciences Hefei Institutes of Physical Science, High Magnetic Field Laboratory of Anhui Province 3 , Hefei 230031, China

4. Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen) 4 , Shenzhen 518055, China

5. MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology 5 , Harbin 150080, China

Abstract

As a rediscovered ternary two-dimensional (2D) material, defect-rich Znln2S4 has great potential for energy-harvesting applications. However, the effect of defects on its physical properties and device performance remains elusive. Herein, we explored the influence of defects (S vacancies and In–Zn substitutions) in few-layer Znln2S4 on the charge transport and photoelectric performance. It is demonstrated that the defect-rich Znln2S4 device exhibits two-dimensional variable range hopping transport mechanism, with uniform charge transport along the channel and low contact resistance at the electrical contacts of Znln2S4/Au. Importantly, due to the contribution of the donor and acceptor energy levels inside the bandgap, the flake exhibits pronounced extrinsic absorption, leading to the competitive photodetector performance under sub-bandgap photo-excitation. Explicitly, the device exhibits a maximum responsivity of 4.08 × 104 A W−1, a photo-gain of >108 electrons per photon, and a specific detectivity of ∼1015 Jones under 532 nm laser excitation, with detection wavelength extending from 400 to 980 nm. Our findings underscore the significant potential of defect-engineering to enrich the functionalities of 2D semiconductors.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

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