Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator-Reference-Cited by-同舟云学术

Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator

Published:2020-11-16 Issue:20 Volume:117 Page:203501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ruzzarin Maria¹^ORCID,De Santi Carlo¹^ORCID,Yu Feng²^ORCID,Fatahilah Muhammad Fahlesa²^ORCID,Strempel Klaas²^ORCID,Wasisto Hutomo Suryo²^ORCID,Waag Andreas²^ORCID,Meneghesso Gaudenzio¹^ORCID,Zanoni Enrico¹^ORCID,Meneghini Matteo¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padova, via Gradenigo 6/b, 35131 Padova, Italy

2. Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6a/b, 38106 Braunschweig, Germany

Funder

NoveGaN

German Research Foundation

Lower Saxony Ministry of Science and Culture

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0027922

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