Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Published:2023-06 Issue:6 Volume:70 Page:3005-3010
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhan Gao¹^ORCID,Rampazzo Fabiana¹,De Santi Carlo¹^ORCID,Fornasier Mirko¹^ORCID,Meneghesso Gaudenzio¹^ORCID,Meneghini Matteo¹^ORCID,Blanck Hervé²,Grünenpütt Jan²,Sommer Daniel²,Chen Ding Yuan³^ORCID,Wen Kai-Hsin³,Chen Jr-Tai³,Zanoni Enrico¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padua, Padua, Italy

2. United Monolithic Semiconductors, GmbH, Ulm, Germany

3. SweGaN AB, Linköping, Sweden

Funder

Italian Ministry of Research project “Empowering GaN-on-SiC and GaN-on-Si technologies for the next challenging millimeter-wave applications, ‘GANAPP’;

U.S. Office of Naval Research

European Commission Horizon 2020 ECSEL initiative project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10122160.pdf?arnumber=10122160

Reference36 articles.

1. Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

2. Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

3. comparative potential performance of si, gaas, gainas, inas submicrometer-gate fet's;cappy;IEEE Transactions on Electron Devices,1980

4. Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

5. Punch-through in short-channel AlGaN/GaN HFETs

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