Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

Author:

Gao Z.,Rampazzo F.,Meneghini M.,De Santi C.,Chiocchetta F.,Marcon D.,Meneghesso G.,Zanoni E.

Funder

EDA

Horizon 2020

ESA ESTEC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. A 2-11 GHz 7-bit high-linearity phase rotator based on wideband injection-locking multi-phase generation for high-speed serial links in 28-nm CMOS FDSOI;Monaco;IEEE J. Solid State Circuits,2017

3. A power-scalable 7-tap FIR equalizer with tunable active delay line for 10-to-25Gb/s multi-mode fiber EDC in 28nm LP-CMOS;Mammei,2014

4. A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-wave LNA in 28nm CMOS;Hadipour,2015

5. Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka band;Di Giacomo-Brunel,2018

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