Transition from electron accumulation to depletion at InGaN surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2387976
Reference25 articles.
1. Surface charge accumulation of InN films grown by molecular-beam epitaxy
2. Intrinsic Electron Accumulation at Clean InN Surfaces
3. Fermi Level Position at Metal-Semiconductor Interfaces
4. Schottky barrier height of n‐InxGa1−xAs diodes
5. Research on III-V Semiconductor Interfaces: Its Impact on Technology and Devices
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