Depth distribution of B implanted in Si after excimer laser irradiation-Reference-Cited by-同舟云学术

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Depth distribution of B implanted in Si after excimer laser irradiation

Published:2005-01-31 Issue:5 Volume:86 Page:051909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mannino Giovanni,Privitera Vittorio,La Magna Antonino,Rimini Emanuele,Napolitani Enrico,Fortunato Guglielmo,Mariucci Luigi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1856696

Reference13 articles.

1. Point defects and dopant diffusion in silicon

2. Reactions of point defects and dopant atoms in silicon

3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

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