Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1644623
Reference17 articles.
1. Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2
2. Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions
3. Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material
4. Silicon self-diffusivity measurement in thermal SiO2 by 30Si/28Si isotopic exchange
5. Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
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