Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2-Reference-Cited by-同舟云学术

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Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Published:2003-11-10 Issue:19 Volume:83 Page:3897-3899
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fukatsu Shigeto,Takahashi Tomonori,Itoh Kohei M.,Uematsu Masashi,Fujiwara Akira,Kageshima Hiroyuki,Takahashi Yasuo,Shiraishi Kenji,Gösele Ulrich

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1625775

Reference16 articles.

1. Diffusion du silicium dans la silice amorphe

2. Catalytic effect of SiO on thermomigration of impurities in SiO2

3. Investigation of silicon interstitial reactions with insulating films using the silicon wafer bonding technique

4. Silicon Self-Diffusion in Quartz

5. Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material

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