Defects and oxidation of group-III monochalcogenide monolayers-Reference-Cited by-同舟云学术

Defects and oxidation of group-III monochalcogenide monolayers

Published:2017-09-14 Issue:10 Volume:147 Page:104709
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Guo Yu¹,Zhou Si¹,Bai Yizhen¹,Zhao Jijun¹

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993639

Reference62 articles.

1. Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

2. Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach

3. Optical properties of excitons in GaTe

4. Preparation of Gallium Sulfide Nanosheets by Liquid Exfoliation and Their Application As Hydrogen Evolution Catalysts

5. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

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