High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe-Reference-Cited by-同舟云学术

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Published:2016-11-21 Issue:3 Volume:12 Page:223-227
ISSN:1748-3387
Container-title:Nature Nanotechnology
language:en
Short-container-title:Nature Nanotech

Author:

Bandurin Denis A.,Tyurnina Anastasia V.,Yu Geliang L.,Mishchenko Artem^ORCID,Zólyomi Viktor,Morozov Sergey V.,Kumar Roshan Krishna,Gorbachev Roman V.,Kudrynskyi Zakhar R.,Pezzini Sergio,Kovalyuk Zakhar D.,Zeitler Uli,Novoselov Konstantin S.,Patanè Amalia,Eaves Laurence,Grigorieva Irina V.^ORCID,Fal'ko Vladimir I.,Geim Andre K.,Cao Yang

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://www.nature.com/articles/nnano.2016.242.pdf

Reference31 articles.

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3. Castro Neto, A. H., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009).

4. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 2–5 (2010).

5. Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotech. 10, 534–540 (2015).

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