Novel Polytype of III–VI Metal Chalcogenides Nano Crystals Realized in Epitaxially Grown InTe

Abstract

AbstractIII–VI metal chalcogenides have garnered considerable research attention as a novel group of layered van der Waals materials because of their exceptional physical properties and potential technological applications. Here, the epitaxial growth and stacking sequences of InTe is reported, an essential and intriguing material from III–VI metal chalcogenides. Aberration‐corrected scanning transmission electron microscopy (STEM) is utilized to directly reveal the interlayer stacking modes and atomic structure, leading to a discussion of a new polytype. Furthermore, correlations between the stacking sequences and interlayer distances are substantiated by atomic‐resolution STEM analysis, which offers evidence for strong interlayer coupling of the new polytype. It is proposed that layer‐by‐layer deposition is responsible for the formation of the unconventional stacking order, which is supported by ab initio density functional theory calculations. The results thus establish molecular beam epitaxy as a viable approach for synthesizing novel polytypes. The experimental validation of the InTe polytype here expands the family of materials in the III–VI metal chalcogenides while suggesting the possibility of new stacking sequences for known materials in this system.