van der Waals heterostructures of AlAs and InSe: Stacking-dependent Raman spectra and electric field dependence of electronic properties-Reference-Cited by-同舟云学术

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van der Waals heterostructures of AlAs and InSe: Stacking-dependent Raman spectra and electric field dependence of electronic properties

Published:2024-05 Issue: Volume:654 Page:159360
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yayak Yanki Oncu,Topkiran Ugur Can^ORCID,Yagmurcukardes Mehmet^ORCID,Sahin Hasan^ORCID

Publisher

Elsevier BV

Reference86 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets;Chhowalla;Nat. Chem.,2013

3. Progress, challenges, and opportunities in two-dimensional materials beyond graphene;Butler;ACS Nano,2013

4. Atomically thin boron nitride: unique properties and applications;Li;Adv. Funct. Mater.,2016

5. Two-and one-dimensional honeycomb structures of silicon and germanium;Cahangirov;Phys. Rev. Lett.,2009

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1. Electronic and Transport Properties of InSe/PtTe₂ van der Waals Heterostructure;Nano Letters;2024-06-27

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