Conformal Doping of FINFETs: a Fabrication and Metrology Challenge-Reference-Cited by-同舟云学术

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Conformal Doping of FINFETs: a Fabrication and Metrology Challenge

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Container-title:AIP Conference Proceedings
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Vandervorst W.,Everaert J. L.,Rosseel E.,Jurczak M.,Hoffman T.,Eyben P.,Mody J.,Zschätzsch G.,Koelling S.,Gilbert M.,Poon T.,del Agua Borniquel J.,Foad M.,Duffy R.,Pawlak B. J.,Seebauer Edmund G.,Felch Susan B.,Jain Amitabh,Kondratenko Yevgeniy V.

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AIP

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit;Applied Physics Letters;2022-08-01

2. Conformal doping strategy for fin structures: tailoring of dopant profile through multiple monolayer doping and capping layer control;Semiconductor Science and Technology;2020-04-03

3. Nanoscale limits of angular optical scatterometry;AIP Advances;2020-01-01

4. Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT;Microscopy and Microanalysis;2018-11-14

5. Effect of surface states on monolayer doping: Crystal orientations, crystallinities, and surface defects;Materials Science in Semiconductor Processing;2018-08

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