Electronic structure of 3C inclusions in 4H SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2732414
Reference28 articles.
1. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
2. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
3. Thermal and doping dependence of 4H-SiC polytype transformation
4. Structural instability of 4H–SiC polytype induced by n-type doping
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2. Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC;Japanese Journal of Applied Physics;2019-11-11
3. Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions;Journal of Applied Physics;2019-02-28
4. Silicon carbide;Single Crystals of Electronic Materials;2019
5. Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals;Journal of Crystal Growth;2018-09
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