Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab4fac/pdf
Reference33 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
3. Material science and device physics in SiC technology for high-voltage power devices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography;Materialia;2021-12
2. Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals;Journal of Applied Physics;2020-04-30
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