Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals
Author:
Affiliation:
1. School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0007219
Reference42 articles.
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
3. Degradation of hexagonal silicon-carbide-based bipolar devices
4. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
5. Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress
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